Title :
Approximate optical gain formulas for 1.55-μm strained quaternary quantum-well lasers
Author :
Ma, T.-A. ; Li, Z.-M. ; Makino, T. ; Wartak, M.S.
Author_Institution :
Dept. of Phys. & Comput., Wilfrid Laurier Univ., Waterloo, Ont., Canada
fDate :
1/1/1995 12:00:00 AM
Abstract :
We have used an efficient analytical model to calculate the optical gain of the strained quantum-well laser of InGaAsP-InP material system. Based on the anisotropic effective mass theory, empirical formulas delineating the relations between optical gain, emission wavelength, well width and material compositions are obtained for 1.55-μm In1-xGaxAsyP1-y quaternary strained quantum-well lasers. Results show a logarithmic relation between the peak optical gain and carrier concentration for all possible material compositions of the quaternary system. We show that the logarithmic relation can be derived algebraically
Keywords :
III-V semiconductors; approximation theory; carrier density; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser theory; quantum well lasers; semiconductor device models; semiconductor quantum wells; 1.55 mum; 1.55-μm strained quaternary quantum-well lasers; In1-xGaxAsyP1-y; InGaAsP-InP; InGaAsP-InP material system; anisotropic effective mass theory; approximate optical gain formulas; carrier concentration; efficient analytical model; emission wavelength; empirical formulas; logarithmic relation; material compositions; optical gain; peak optical gain; quaternary strained quantum-well lasers; strained quantum-well laser; well width; Capacitive sensors; Composite materials; Distributed feedback devices; Geometrical optics; Optical feedback; Optical materials; Optical mixing; Optical saturation; Quantum well lasers; Stimulated emission;
Journal_Title :
Quantum Electronics, IEEE Journal of
