Approximate optical gain formulas for 1.55-μm strained quaternary quantum-well lasers

Author

Ma, T.-A. ; Li, Z.-M. ; Makino, T. ; Wartak, M.S.

Author_Institution

Dept. of Phys. & Comput., Wilfrid Laurier Univ., Waterloo, Ont., Canada

Volume

31

Issue

1

fYear

1995

fDate

1/1/1995 12:00:00 AM

Firstpage

29

Lastpage

34

Abstract

We have used an efficient analytical model to calculate the optical gain of the strained quantum-well laser of InGaAsP-InP material system. Based on the anisotropic effective mass theory, empirical formulas delineating the relations between optical gain, emission wavelength, well width and material compositions are obtained for 1.55-μm In_1-xGa_xAs_yP_1-y quaternary strained quantum-well lasers. Results show a logarithmic relation between the peak optical gain and carrier concentration for all possible material compositions of the quaternary system. We show that the logarithmic relation can be derived algebraically

Keywords

III-V semiconductors; approximation theory; carrier density; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser theory; quantum well lasers; semiconductor device models; semiconductor quantum wells; 1.55 mum; 1.55-μm strained quaternary quantum-well lasers; In_1-xGa_xAs_yP_1-y; InGaAsP-InP; InGaAsP-InP material system; anisotropic effective mass theory; approximate optical gain formulas; carrier concentration; efficient analytical model; emission wavelength; empirical formulas; logarithmic relation; material compositions; optical gain; peak optical gain; quaternary strained quantum-well lasers; strained quantum-well laser; well width; Capacitive sensors; Composite materials; Distributed feedback devices; Geometrical optics; Optical feedback; Optical materials; Optical mixing; Optical saturation; Quantum well lasers; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.341704

Filename

341704