DocumentCode
1218900
Title
An extended Tanh law MOSFET model for high temperature circuit simulation
Author
Osman, Ashraf A. ; Osman, Mohamed A. ; Dogan, Numan S. ; Imam, Mohamed A.
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
Volume
30
Issue
2
fYear
1995
fDate
2/1/1995 12:00:00 AM
Firstpage
147
Lastpage
150
Abstract
The Tanh law MOSFET model proposed earlier by Shousha & Aboulwafa (see ibid., vol. 28, no. 2, p. 176-9, 1993) is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27-200°C)
Keywords
MOSFET; carrier mobility; circuit analysis computing; semiconductor device models; 27 to 200 C; drain current; extended Tanh law MOSFET model; high temperature circuit simulation; mobility; temperature dependence; threshold voltage; CMOS technology; Circuit simulation; Geometry; MOSFET circuits; Predictive models; SPICE; Solid modeling; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.341743
Filename
341743
Link To Document