Title :
1.42 μm continuous-wave operation of GaInNAs laser diodes
Author :
Gollub, D. ; Moses, S. ; Fischer, M. ; Forchel, A.
Author_Institution :
Nanoplus Nanosystems & Technol. GmbH, Gerbrunn, Germany
fDate :
5/15/2003 12:00:00 AM
Abstract :
Continuous-wave (CW) operation of GaInNAs laser diodes in the 1.4 μm range has been realised for the first time. A GaInNAs double quantum well separate confinement heterostructure was grown by solid source molecular beam epitaxy. Threshold currents as low as 66 mA and external efficiencies as high as 0.29 W/A could be demonstrated in CW operation. Lasing was observed up to 150°C and a characteristic temperature T0 of 111K was demonstrated. The emission wavelength at room temperature was centred at 1417 nm.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; optical communication equipment; quantum well lasers; 1.42 micron; 150 C; 66 mA; CW operation; DQW ridge waveguide LDs; GaInNAs; GaInNAs laser diodes; continuous-wave operation; double quantum well SCH LDs; light sources; long wavelength lasers; optical communication systems; semiconductor lasers; separate confinement heterostructure; solid source MBE; solid source molecular beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030532
