Abstract :
The attenuation of small coplanar transmission lines on insulating InP and GaAs has been investigated experimentally over the frequency range 0-60 GHz by on-wafer probing. The ground-to-ground spacing d, the center line width w, and the metal thickness t were varied. For thin (0.25-1 mu m) gold metallization, the variation of the attenuation with frequency was found to be dependent on the geometry of the line. A good fit to the experimental data was obtained when the attenuation a was modeled as a=a/sub 0/f/sup n/, where a/sub 0/ and n are geometry dependent. The exponent n was found to be in the range 0.15-0.35, and to increase with increasing w/d ratio, which is interpreted to be due to a correspondingly varying frequency-dependent resistance and current distribution.<>
Keywords :
current distribution; electric resistance; metallisation; strip lines; 0 to 60 GHz; Au-GaAs; Au-InP; EHF; GaAs; MM-wave type; attenuation; coplanar transmission lines; current distribution; frequency variation; frequency-dependent resistance; insulating InP; metal thickness; millimeter-wave; on-wafer probing; thin metallization; Attenuation; Coplanar transmission lines; Frequency; Gallium arsenide; Geometry; Gold; Indium phosphide; Insulation; Metallization; Solid modeling;
