Title :
High-performance microwave AlGaAs-InGaAs Pnp HBT with high-DC current gain
Author :
Liu, William ; Hill, Darrell ; Costa, Damion ; Harris, James S.
Author_Institution :
Texas Instrum., Dallas, TX, USA
Abstract :
An Pnp heterojunction bipolar transistor (HBT) which had among the highest reported values of f/sub T/( approximately 23 GHz) and f/sub max/( approximately 40 GHz) employed a heavily doped InGaAs pseudomorphic base. However, this HBT had very low values of DC current gain (>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 23 GHz; 40 GHz; AlGaAs-InGaAs; InGaAs pseudomorphic base; heavily doped base; heterojunction bipolar transistor; high-DC current gain; high-frequency performance; microwave HBTs; Aluminum; Charge carrier lifetime; Current measurement; Cutoff frequency; Doping; Epitaxial layers; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Performance gain;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
