Cryogenic performance of a monolithic W-band amplifier using picosecond optoelectric technique

Author

Oshita, F. ; Martin, M. ; Matloubian, M. ; Fetterman, H. ; Wang, H. ; Tan, K. ; Streit, D.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

2

Issue

8

fYear

1992

Firstpage

340

Lastpage

342

Abstract

Cryogenic characterization of a monolithic W-band pseudomorphic InGaAs HEMT amplifier has been demonstrated for the first time using the picosecond optoelectronic technique. Low temperature, millimeter-wave measurements have been performed without the use of conventional millimeter-wave sources, components, and transitions. At 94 GHz, the single-state amplifier exhibits gain of 4.5 dB at 300 K, which increases to 7 dB at 70 K.<>

Keywords

III-V semiconductors; cryogenics; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 4.5 to 7 dB; 70 to 300 K; 94 GHz; EHF; HEMT amplifier; InGaAs; MIMIC; MM-wave type; low temperature measurements; millimeter-wave measurements; monolithic W-band amplifier; picosecond optoelectric technique; pseudomorphic device; Cryogenics; Frequency measurement; Indium gallium arsenide; Millimeter wave measurements; Millimeter wave technology; Optical amplifiers; Performance evaluation; Pulse amplifiers; Sampling methods; Switches;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.153607

Filename

153607