Title :
Wide temperature range, from 0 to 85°C, operation of a 1.55 μm, 40 Gbit/s InGaAlAs electro-absorption optical modulator
Author :
Arimoto, H. ; Shimizu, J. ; Shirai, M. ; Aoki, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Wide temperature range, from 0 to 85°C, operation of 1.55 μm, 40 Gbit/s InGaAlAs multiple quantum well electro-absorption optical modulators is demonstrated for the first time.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; quantum well devices; 0 to 85 degC; 1.55 micron; 40 Gbit/s; DFB laser; InGaAlAs; InGaAlAs multiple quantum well electro-absorption optical modulators; electrical detuning compensation; monolithically integrated electro-absorption modulator; strain compensated InGaAlAs MQW active layer; temperature dependence; temperature sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20055733
