Title :
Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers
Author :
Li, L.H. ; Rossetti, M. ; Fiore, A. ; Occhi, L. ; Velez, C.
Author_Institution :
Inst. of Photonics & Quantum Electron., Ecole Polytechnique Federale de Lausanne, Switzerland
Abstract :
A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active region is demonstrated. The fabricated QD SLEDs exhibit a large spectral width up to 121 nm, covering the range 1165-1286 nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; superluminescent diodes; 1165 to 1286 nm; InGaAs; chirped multiple InAs quantum dot multilayers; emission spectrum; spectral width; superluminescent diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20056995
