Title :
High power and linearity performances of gallium nitride HEMT devices on sapphire substrate
Author :
Werquin, M. ; Gaquiére, C. ; Guhel, Y. ; Vellas, N. ; Theron, D. ; Boudart, B. ; Hoel, V. ; Germain, M. ; De Jaeger, J.C. ; Delage, S.
Author_Institution :
UMR-CNRS, Villeneuve d´´Ascq, France
Abstract :
The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the same power density. This study demonstrates that GaN devices are ideal candidates for applications requiring high power and high linearity behaviours simultaneously.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; intermodulation; power transistors; wide band gap semiconductors; 20 dB; Al2O3; AlGaN-GaN; GaN devices; gallium nitride HEMT devices; high drain-source bias voltages; high linearity applications; high power performances; intermodulation ratio; output power densities; sapphire substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20056735
