Author :
Luo, B. ; Mehandru, R. ; Kim, Jihyun ; Ren, F. ; Gila, B.P. ; Onstine, A.H. ; Abernathy, C.R. ; Pearton, S.J. ; Gotthold, D. ; Birkhahn, R. ; Peres, B. ; Fitch, R.C. ; Moser, N. ; Gillespie, J.K. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A.
Author_Institution :
Dept. of Chem. Eng., Univ. of Florida, Gainesville, FL, USA
Abstract :
MBE-deposited Sc2O3 films are found to effectively passivate surface states in the gate-drain region of AlGaN/GaN HEMTs. The effect of the passivation is observed in higher forward IDS-VDS three-terminal breakdown voltage and output power under class A operation. In the latter case, the power-added efficiency was at least doubled.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; passivation; scandium compounds; semiconductor device breakdown; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN high electron mobility transistors; MBE-deposited Sc2O3 films; Sc2O3; Sc2O3 passivation; class A operation; forward I-V characteristics; gate reverse leakage current; gate-drain region; output power; power-added efficiency; surface state passivation; three-terminal breakdown voltage;
