Title :
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs
Author :
Verzellesi, G. ; Basile, A. ; Mazzanti, A. ; Canali, C. ; Meneghesso, G. ; Zanoni, E.
Author_Institution :
Dipt. di Ingegneria dell´´Informazione, Univ. di Modena e Reggio Emilia, Italy
fDate :
5/15/2003 12:00:00 AM
Abstract :
Temperature increase is shown to impact the turn-on waveforms of AlGaAs/GaAs heterostructure field-effect transistors in a non-trivial way, resulting in reduced drain current fast change but shortened drain current transient. Two-dimensional device simulations accounting for hole traps at the ungated recess surface provide a consistent physical explanation for the observed behaviour.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; hole traps; semiconductor device models; surface states; 2D device simulations; AlGaAs-GaAs; GaAs HFETs; double-recess power HFETs; drain current transient; heterostructure FETs; heterostructure field-effect transistors; hole traps; surface-trap-induced gate-lag effects; temperature impact; turn-on waveforms; ungated recess surface;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030529
