DocumentCode
1219207
Title
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs
Author
Verzellesi, G. ; Basile, A. ; Mazzanti, A. ; Canali, C. ; Meneghesso, G. ; Zanoni, E.
Author_Institution
Dipt. di Ingegneria dell´´Informazione, Univ. di Modena e Reggio Emilia, Italy
Volume
39
Issue
10
fYear
2003
fDate
5/15/2003 12:00:00 AM
Firstpage
810
Lastpage
811
Abstract
Temperature increase is shown to impact the turn-on waveforms of AlGaAs/GaAs heterostructure field-effect transistors in a non-trivial way, resulting in reduced drain current fast change but shortened drain current transient. Two-dimensional device simulations accounting for hole traps at the ungated recess surface provide a consistent physical explanation for the observed behaviour.
Keywords
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; hole traps; semiconductor device models; surface states; 2D device simulations; AlGaAs-GaAs; GaAs HFETs; double-recess power HFETs; drain current transient; heterostructure FETs; heterostructure field-effect transistors; hole traps; surface-trap-induced gate-lag effects; temperature impact; turn-on waveforms; ungated recess surface;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030529
Filename
1204800
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