Title :
High temperature surface acoustic wave devices: fabrication and characterisation
Author :
Thiele, J.A. ; Da Cunha, M. Pereira
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maine, Orono, ME, USA
fDate :
5/15/2003 12:00:00 AM
Abstract :
Langasite (LGS) and quartz surface acoustic wave devices have been fabricated and tested up to 750°C, for frequency control applications and sensors. The measured magnitude of the transmission coefficient (|S21|) and temperature coefficient of frequency (TCF) are compared to numerical predictions and verify quantitatively that the fabricated LGS devices maintain good operation up to 750°C, whereas quartz devices rapidly degrade at around 580°C due to the alpha-beta (α to β) transition.
Keywords :
S-parameters; frequency control; gallium compounds; high-temperature electronics; lanthanum compounds; quartz; surface acoustic wave devices; 580 C; 750 C; La3Ga5SiO14; Pt-Zr-La3Ga5SiO14; Pt-Zr-SiO2; SAW device characterisation; SiO2; alpha-beta transition; frequency control applications; high temperature SAW devices; langasite devices; quartz devices; sensor applications; surface acoustic wave device fabrication; temperature coefficient of frequency; transmission coefficient;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030511
