DocumentCode :
121929
Title :
Properties of N-H local vibration modes in GaAsN grown by chemical beam epitaxy
Author :
Ikeda, Ken-ichi ; Yamakata, Akira ; Demizu, Koushiro ; Kojima, Nobuhiko ; Ohshita, Yoshio ; Yamaguchi, Masaki
Author_Institution :
Toyota Technol. Inst., Nagoya, Japan
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1821
Lastpage :
1824
Abstract :
The structural and electrical properties of N-H complexes in GaAsN grown by chemical beam epitaxy are summarized. Using local vibration mode spectroscopy, some of the vibration frequencies are shown to be the same as those in the material grown by liquid encapsulated Czochralski and metal organic chemical vapor deposition, while no vibration modes are common to those in the material grown by molecular beam epitaxy. The dependencies of the vibration frequencies on measurement temperatures and annealing temperatures, and polarization of the vibration directions are studied to understand the structural properties of N-H complexes. The As source flow rate affects ratios of the defect densities, which indicate that those defects have different formation processes. The charge excitations by irradiation light indicate that the charge relaxation processes caused by those defects are in the orders of micro seconds.
Keywords :
Fourier transform spectra; III-V semiconductors; MOCVD; annealing; arsenic compounds; chemical beam epitaxial growth; electrical conductivity; gallium compounds; infrared spectra; semiconductor epitaxial layers; vibrational modes; wide band gap semiconductors; GaAsN; Kazuma; annealing; charge excitations; charge relaxation; chemical beam epitaxy; defect densities; defects; electrical properties; irradiation light; liquid encapsulated Czochralski method; local vibration mode spectroscopy; metal organic chemical vapor deposition; structural properties; Annealing; Chemicals; Molecular beam epitaxial growth; Temperature dependence; Temperature measurement; FT-IR; GaAsN; N-H complex; chemical beam epitaxy; local vibration mode;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925276
Filename :
6925276
Link To Document :
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