Performance simulation of nanoscale silicon rod field-effect transistor logic

Author

Dwyer, Chris ; Vicci, Leandra ; Taylor, Russell M.

Author_Institution

Dept. of Comput. Sci., Univ. of North Carolina, Chapel Hill, NC, USA

Volume

2

Issue

2

fYear

2003

fDate

6/1/2003 12:00:00 AM

Firstpage

69

Lastpage

74

Abstract

We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RG-FET) using the PISCES-IIb semiconductor drift-diffusion solver. The results from these simulations are used by a customized SPICE 3f5 kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline.

Keywords

digital simulation; electronic engineering computing; field effect logic circuits; field effect transistors; logic gates; nanoelectronics; self-assembly; semiconductor device models; silicon; PISCES-IIb; SPICE kernel modifications; Si; Si ring-gated FET; customized SPICE 3f5 kernel; logic gates; nanoscale Si rod FET logic; performance simulation; ring-gated field-effect transistor; rod shaped nanoscale FET; self-assembling fabrication technique; semiconductor drift-diffusion solver; Circuits; DNA; FETs; Fabrication; Gold; Kernel; Logic; SPICE; Self-assembly; Silicon;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2003.812592

Filename

1204817