Title :
Four-fold MQWs absorption enhancement in a 430 nm thick InGaAs/GaAsP MQWs solar cell
Author :
Behaghel, Benoit ; Tamaki, Ryo ; Vandamme, Nicolas ; Watanabe, K. ; Dupuis, Christophe ; Bardou, N. ; Sodabanlu, Hassanet ; Cattoni, Andrea ; Okada, Yoshitaka ; Sugiyama, Masakazu ; Collin, S. ; Guillemoles, Jean-Francois
Author_Institution :
Lab. for Photonics & Nanostruct., Marcoussis, France
Abstract :
We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the quantum efficiency in the MQW region by a factor of 4 through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 9% efficiency. This promising result can be further improved by anti-reflection layers and additional light-trapping solutions.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; gold; indium compounds; light absorption; mirrors; quantum wells; solar cells; wide band gap semiconductors; Fabry-Perot resonances; InGaAs-GaAsP; antireflection layers; epitaxial layer trans,er; four-fold MQW absorption enhancement; gold mirror; light absorption; light management; light-trapping solutions; multiple quantum wells; optical simulation; p-i-n single junction solar cell; quantum efficiency; size 430 nm; Absorption; Gallium arsenide; Gold; Mirrors; PIN photodiodes; Photovoltaic cells; Quantum well devices; light management; light trapping; quantum well solar cells; thin-film III–V photovoltaic cell;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925285
