Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential

In Monte Carlo simulations of carriers in confined layers, quantum mechanical effects render ineffective the reflection boundary condition method of including surface roughness scattering. Therefore, to include the effects of both the quantum confinement and surface roughness in thin silicon on insulator (SOI) MOSFETs, the surface roughness must be handled differently. In this paper, we include the surface roughness as an additional scattering mechanism in a three-dimensional Poisson-ensemble Monte Carlo simulation that includes the quantum mechanical effects with the effective potential. We find that this method yields appropriate results for both the quantum confinement and surface roughness, provided adequate steps are taken when implementing the surface roughness scattering rate.