DocumentCode :
1219417
Title :
A Micromachined Inline-Type Wideband Microwave Power Sensor Based on GaAs MMIC Technology
Author :
Han, Lei ; Huang, Qing-An ; Liao, Xiao-Ping ; Su, Shi
Author_Institution :
Key Lab. of MEMS, Southeast Univ., Nanjing
Volume :
18
Issue :
3
fYear :
2009
fDate :
6/1/2009 12:00:00 AM
Firstpage :
705
Lastpage :
714
Abstract :
Wideband 8-12-GHz inline-type microwave power sensors that are based on measuring the microwave power coupled from the coplanar waveguide line by a microelectromechanical systems membrane are presented. In this method, the signal is available during the power detection. In order to obtain the low reflection losses and insertion losses, as well as the wideband response of the power sensor, an impedance match structure and a compensating capacitance are proposed. The fabrication of the power sensor is compatible with the GaAs monolithic microwave integrated circuit (MMIC) process. The experimental results show that the sensor has reflection losses better than 20 dB and insertion losses less than 0.45 dB up to 12 GHz. A sensitivity of more than 30 muV/mW and a resolution of 0.2 mW are obtained at the 10-GHz frequency.
Keywords :
III-V semiconductors; MMIC; coplanar waveguides; gallium arsenide; impedance matching; micromachining; microsensors; microwave detectors; GaAs; MMIC technology; compensating capacitance; coplanar waveguide line; frequency 8 GHz to 12 GHz; impedance match structure; insertion loss; microelectromechanical system membrane; micromachined inline-type wideband sensor; microwave power sensor; monolithic microwave integrated circuit process; power 0.2 mW; power detection; reflection loss; GaAs; micromachining; microwave power sensor; monolithic microwave integrated circuits (MMICs);
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2009.2017113
Filename :
4808327
Link To Document :
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