Title :
High-performance Al0.48In0.52As/Ga0.47In0.53As MSM-HEMT receiver OEIC grown by MOCVD on patterned InP substrates
Author :
Hong, Woo-Pyo ; Chang, Gee-Kung ; Bhat, Ritesh ; Gimlett, J.L. ; Nguyen, Chinh K. ; Sasaki, Gaku ; Koza, M.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Reports the first demonstration of a new long-wavelength receiver OEIC comprising an AlInAs/GaInAs MSM detector and an AlInAs/GaInAs HEMT preamplifier. The layer structure was grown by LP-MOCVD on patterned InP substrates, which allowed independent optimisation of the MSM detector and HEMT preamplifier. The MSM detector showed the lowest leakage current yet reported and the HEMT exhibited a transconductance of 260 mS/mm. An excellent receiver response to 1.7 Gbit/s NRZ signals has been obtained.
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; semiconductor growth; 1.7 Gbit/s; AlInAs-GaInAs; HEMT preamplifier; InP; MSM detector; NRZ signals; leakage current; long-wavelength receiver OEIC; receiver response; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891049
