Title :
MESFETs in thin silicon on SIMOX
Author :
Vogt, Hendrik ; Burbach, Gert ; Belz, Julian ; Zimmer, G.
Author_Institution :
Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, West Germany
Abstract :
Si MESFETs have been built into a thin (100 nm) Si film on buried oxide implanted wafers. Aluminium has been used as gate material to obtain process compatibility with a high-performance CMOS process. With appropriate back bias the normally-on devices become enhancement-type. The high-quality SIMOX substrate provides excellent transconductance, while the thin film reduces two-dimensional effects.
Keywords :
Schottky gate field effect transistors; elemental semiconductors; field effect integrated circuits; integrated circuit technology; silicon; 100 nm; Al gate material; Al-Si-SiO 2-Si structure; CMOS process compatibility; MOS structure; SIMOX substrate; Si MESFETs; Si thin film; back bias; buried oxide implanted wafers; enhancement-type; normally-on devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891061
