Title :
Nearly back-dissolution-free LPE growth from Sn solutions over gratings for DFB lasers
Author_Institution :
Deutsche Bundespost Telekom, Forschungsinst., Darmstadt, West Germany
Abstract :
1.55 mu m GaInAsP-InP DFB laser wafers based on p-type substrates are grown in a two-step LPE process. The grating is effectively preserved from thermal deformation and back-dissolution by using an InP-Sn solution at only 464 degrees C for overgrowth. Data for the solubility and critical supersaturation for the Sn-In-P system are given.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser transitions; liquid phase epitaxial growth; optical waveguides; optical workshop techniques; semiconductor growth; semiconductor junction lasers; 1.55 micron; 464 degC; DFB lasers; GaInAsP-InP; III/V semiconductors; InP-Sn solution; LPE growth; Sn solutions; back-dissolution-free growth; critical supersaturation; distributed feedback; gratings; overgrowth; p-type substrates; semiconductor lasers; solubility; thermal deformation; two-step LPE process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891062
