Title :
X-band monolithic tunable resonator/filter
Author :
Cheng, Kwok-Keung M. ; Everard, J.K.A.
Author_Institution :
Dept. of Electron. & Electr. Eng., King´s Coll., London, UK
Abstract :
The experimental results of GaAs MMIC varactor-tuned resonator are reported. Planar Schottky diodes are used in punch-through mode to allow large voltage swing operation. The resonator can be tuned over the frequency range 8.6-9.75 GHz with +or-0.2 dB insertion loss flatness. It could find applications in oscillators and filters in radar systems.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; microwave filters; resonators; tuning; varactors; 8.6 to 9.75 GHz; GaAs; III-V semiconductor; MMIC; SHF; Schottky diodes; X-band; insertion loss; large voltage swing operation; microwave IC; monolithic tunable resonator/filter; oscillators; planar diodes; punch-through mode; radar systems; varactor-tuned resonator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891066
