A GaAs MESFET small-signal equivalent circuit including transmission line effects

Author

Fjeldly, Tor A. ; Paulsen, André ; Jensen, øivind

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Trondheim Univ., Norway

Volume

36

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1557

Lastpage

1563

Abstract

A small-signal equivalent circuit for the GaAs MESFET, suitable for the design of integrated circuits, was developed that includes the following features: (1) at high frequencies, the gate channel has the character of an RC transmission line, for which a π-equivalent representation is used; (2) under saturated current conditions, a stationary high-field domain may be present in the conducting channel, for which an equivalent is derived in terms of a small-signal admittance. The resulting equivalent circuit was optimized with very good results by modeling process average S-parameters between 1 and 25 GHz for a 1 μm gate device. The basic structure of the model is relevant for other FET designs such as heterostructure FETs (HEMTs) and devices with submicrometer gate lengths

Keywords

III-V semiconductors; MMIC; S-parameters; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; semiconductor device models; 1 micron; 1 to 25 GHz; GaAs; HEMTs; MESFET; RC transmission line; S-parameters; design of integrated circuits; features; gate channel; high frequencies; modeling; saturated current conditions; semiconductor; small-signal equivalent circuit; stationary high-field domain; transmission line effects; Admittance; Distributed parameter circuits; Equivalent circuits; FETs; Frequency; Gallium arsenide; HEMTs; MESFET circuits; MESFET integrated circuits; MODFETs;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.34212

Filename

34212