Title :
W-band monolithic low noise amplifiers for advanced microwave scanning radiometer
Author :
Itoh, Y. ; Nakahara, Kouji ; Sakura, T. ; Yoshida, N. ; Katoh, T. ; Takagi, T. ; Ito, Y.
Author_Institution :
Electro-Opt. & Microwave Syst. Lab., Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
Monolithic low noise amplifiers using 0.15-μm AlGaAs-InGaAs-GaAs pseudomorphic HEMTs with a passivation film have been developed at W-band for the Advanced Microwave Scanning Radiometer. A two-stage monolithic amplifier has achieved a noise figure of 3.4 dB with a small signal gain of 8.7 dB at 91 GHz. A six-stage amplifier cascading three two-stage monolithic amplifier chips has achieved a noise figure of 4.2 dB with a small signal gain of 29.7 dB at 91 GHz. Taking into account the minimum noise figure of 2.5 dB with an associated gain of 4.3 dB of 0.15×60 μm2 PHEMTs at 90 GHz, these results demonstrate that a good noise matching has been successfully achieved.
Keywords :
HEMT integrated circuits; MMIC amplifiers; field effect MIMIC; gallium arsenide; integrated circuit noise; microwave measurement; millimetre wave measurement; passivation; radiometers; radiometry; 0.15 micron; 29.7 dB; 3.4 dB; 4.2 dB; 8.7 dB; 90 to 91 GHz; AlGaAs-InGaAs-GaAs; EHF; MIMIC; MM-wave IC; PHEMTs; W-band; low noise amplifiers; microwave scanning radiometer; monolithic LNA; passivation film; pseudomorphic HEMTs; six-stage amplifier; two-stage monolithic amplifier; Circuit noise; Gain; Gallium arsenide; HEMTs; Impedance matching; Low-noise amplifiers; Microwave amplifiers; Microwave radiometry; Noise figure; Noise measurement;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
