DocumentCode :
1220285
Title :
Laser-assisted deposition of BN films on InP for MIS applications
Author :
Paul, T.K. ; Bhattacharya, P. ; Bose, D.N.
Author_Institution :
Indian Inst. of Technol., Kharagpur, India
Volume :
25
Issue :
23
fYear :
1989
Firstpage :
1602
Lastpage :
1603
Abstract :
Thin films of boron nitride (500-1000 AA) were deposited on InP using a Q-switched ruby laser. Films were found to have a dielectric constant of 3.28, resistivity of 5*1011 Omega cm and bandgap of 4.1 eV. The minimum interface state density for the Al/BN/InP system was 6.2*1010 cm-2 eV-1, 0.5 below the conduction band.
Keywords :
III-V semiconductors; boron compounds; dielectric thin films; indium compounds; laser beam applications; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; solid lasers; 4.1 eV; 500 Gohmcm; 500 to 1000 A; Al-BN-InP; Al 2O 3:Cr laser; Q-switched laser; bandgap; dielectric constant; gate insulators; interface state density; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19891075
Filename :
138819
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1220285
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