DocumentCode :
1220371
Title :
A study of contamination and damage on Si surfaces induced by dry etching
Author :
Moghadam, Farhad K. ; Mu, Xiao-Chun
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Volume :
36
Issue :
9
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
1602
Lastpage :
1609
Abstract :
Damage/contamination effects of dry etching in two different modes, plasma etching (PE) and reactive ion etching (RIE), on silicon surfaces just after oxide etching are discussed. The electrical measurements on aluminium Schottky diodes were used to evaluate the effect of dry processing and various postetch treatments on a Si substrate. The presence of heavy metal contamination of the Si surface as a result of dry etching was confirmed by secondary ion mass spectroscopy and SECCO etch defect decoration. C-t (minority-carrier lifetime) measurements on special guard ring devices were used as indirect evidence of heavy metal contaminants. The quality of a gate oxide grown on Si surfaces after dry-etching conditions was examined through breakdown voltage. Improved device electron mobility was observed for the RIE-exposed Si surface compared to PE, due to the smoother surface after the RIE process
Keywords :
elemental semiconductors; semiconductor technology; silicon; sputter etching; RIE; SECCO etch defect decoration; Si; Si substrate; Si surfaces; dry etching; dry processing; electrical measurements; electron mobility; gate oxide breakdown voltage; gate oxide quality; heavy metal contaminants; heavy metal contamination; plasma etching; postetch treatments; reactive ion etching; secondary ion mass spectroscopy; special guard ring devices; surface contamination; surface damage; surface smoothness; Aluminum; Dry etching; Electric variables measurement; Plasma applications; Plasma materials processing; Plasma measurements; Pollution measurement; Silicon; Surface contamination; Surface treatment;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.34219
Filename :
34219
Link To Document :
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