Effects of a new trench-isolated transistor using sidewall gates

Author

Hieda, Katsuhiko ; Horiguchi, Fumio ; Watanabe, Hidehiro ; Sunouchi, Kazumasa ; Inoue, Ikuko ; Hamamoto, Takeshi

Author_Institution

Toshiba Corp., Kawasaki, Japan

Volume

36

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1615

Lastpage

1619

Abstract

In this structure, the sidewall of the trench is used as an extra channel region. The sidewall gate electrode, which covers the sharp convex corner of the trench, increases the electric field at the channel edge. The advantages of this transistor are excellent cutoff characteristics, a small substrate bias effect, and high reliability (compared with the LOCOS-isolated transistor). The sidewall gate along the channel edge plays an important role in increasing gate controllability and decreasing the electric field at the drain

Keywords

MOS integrated circuits; VLSI; insulated gate field effect transistors; integrated circuit technology; reliability; channel edge; cutoff characteristics; extra channel region; gate controllability; high reliability; sharp convex corner; sidewall gate electrode; sidewall gates; small substrate bias effect; trench-isolated transistor; Capacitors; Controllability; Electrodes; Etching; Fabrication; Isolation technology; MOSFET circuits; Random access memory; Very large scale integration; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.34221

Filename

34221