Title :
Pulse response of avalanche photodiodes
Author :
Roy, B.C. ; Chakrabarti, Nirmal B.
Author_Institution :
Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India
fDate :
2/1/1992 12:00:00 AM
Abstract :
A study has been made of the time response of heterostructure avalanche photodiodes for InGaAs and InP/InGaAs material systems. A transfer/scattering matrix method, where the matrix parameters are related to the ionization coefficients, has been used. A time domain study has been carried out to find the time variation of electron and hole number densities and currents
Keywords :
III-V semiconductors; avalanche photodiodes; carrier mobility; gallium arsenide; indium compounds; InP-InGaAs; electron currents; frequency response; heterostructure avalanche photodiodes; hole number densities; ionization coefficients; matrix parameters; optical communications equipment; photodetectors; pulse response; scattering matrix method; semiconductors; time domain study; time response; time variation; transfer matrix method; Absorption; Avalanche photodiodes; Bandwidth; Charge carrier processes; Dark current; Frequency response; Indium gallium arsenide; Indium phosphide; Ionization; Photonic band gap;
Journal_Title :
Lightwave Technology, Journal of
