Title :
A planar InP/InGaAs avalanche photodiode with floating guard ring and double diffused junction
Author :
Liu, Y. ; Forrest, S.R. ; Hladky, J. ; Lange, M.J. ; Olsen, G.H. ; Ackley, D.E.
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
fDate :
2/1/1992 12:00:00 AM
Abstract :
The authors discuss the fabrication, performance, and design of a novel, planar In0.53Ga0.47 As/InP separate absorption and multiplication region avalanche photodiode (SAM-APD) with floating guard rings and a double Zn diffused junction. The APD, grown by both vapor phase epitaxy and metalorganic vapor phase epitaxy, is observed to have a uniform gain of 85, a minimum primary dark current density of 5×10-6 A/cm2 at 90% of breakdown, and a capacitance of 0.4 pF for a front-side illuminated device. Both experimental and analytical results show that the double-diffused floating guard ring structure prevents edge breakdown, and also greatly reduces the electric field along the semiconductor/insulator surface. The operation mechanisms and the optimum design of the planar APD based on a two-dimensional device model are discussed
Keywords :
III-V semiconductors; avalanche photodiodes; diffusion in solids; gallium arsenide; indium compounds; optical communication equipment; optical workshop techniques; photodetectors; semiconductor growth; vapour phase epitaxial growth; 0.4 pF; 2D device models; APD design; InP-InGaAs; Zn; absorption region; double diffused junction; edge breakdown; electric field; floating guard ring; front-side illuminated device; metalorganic vapor phase epitaxy; minimum primary dark current density; multiplication region; optimum design; planar APD; planar avalanche photodiode; semiconductor/insulator surface; semiconductors; uniform gain; vapor phase epitaxy; Absorption; Avalanche photodiodes; Capacitance; Dark current; Electric breakdown; Epitaxial growth; Fabrication; Indium gallium arsenide; Indium phosphide; Zinc;
Journal_Title :
Lightwave Technology, Journal of
