Title :
Observation of nonbiased degradation recovery in GaInAsP/InP laser diodes
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ.
fDate :
2/1/1992 12:00:00 AM
Abstract :
Conventional accelerated lifetests of laser diodes generally involve operating the devices continuously at either constant drive current or power output with periodic recording of their characteristics. In this work, a new observation of degradation recovery from a noncontinuous lifetest performed on 1.3-μm GaInAsP/InP double-heterostructure (DH) laser diodes of the inverted-rib structure is reported. This nonconventional lifetest method involves constant 5-mW/facet biasing at 50°C followed by a period of no bias at room temperature. On average, the threshold current and current for 5-mW/facet output reduced by 6.7 and 8.4%, respectively, during the unbiased period. Redistribution of mobile defects in the cladding layer is postulated to be the mechanism responsible for the degradation recovery
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; life testing; optical testing; semiconductor device testing; semiconductor junction lasers; 1.3 micron; 5 mW; 50 degC; GaInAsP-InP; IR; accelerated lifetests; cladding layer; constant drive current; double-heterostructure; facet biasing; inverted-rib structure; laser diodes; mobile defects; no bias; nonbiased degradation recovery; noncontinuous lifetest; periodic recording; power output; room temperature; semiconductors; threshold current; unbiased period; Acceleration; DH-HEMTs; Degradation; Diode lasers; High speed optical techniques; Indium phosphide; Optical attenuators; Substrates; Temperature; Threshold current;
Journal_Title :
Lightwave Technology, Journal of
