Title :
Defect study of Cu2ZnSn(S,Se)4 thin film with different Cu/Sn ratio by admittance spectroscopy
Author :
Xianjia Luo ; Islam, Md Minarul ; Halim, Mohammad Abdul ; Xu, Changsheng ; Sakurai, Takayasu ; Sakai, Noriyuki ; Kato, Toshihiko ; Sugimoto, Hiroshi ; Tampo, Hitoshi ; Shibata, Hajime ; Niki, Shigeru ; Akimoto, Katsuhiro
Author_Institution :
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
Abstract :
Defect properties of Cu2ZnSn(Sx,Se1-x)4 (CZTSSe) were investigated by admittance spectroscopy (AS). Two defect states (labeled EA1 and EA2) were observed in CZTSSe (x=0.15) with different Cu/Sn ratio. When the Cu/Sn ratio increased from 1.75 to 1.95, the activation energy of EA1 and EA2 decreased and the defect densities increased. The capture cross sections of EA1 and EA2 defects are in the order from 10-16 cm2 to 10-18 cm2, indicating that these two defects possibly do not impact on device performance.
Keywords :
copper compounds; defect absorption spectra; defect states; semiconductor materials; semiconductor thin films; solar cells; tin compounds; zinc compounds; Cu2ZnSn(SSe)4; activation energy; admittance spectroscopy; capture cross sections; defect densities; defect states; solar cells; thin film; Artificial intelligence; Lead; Semiconductor device measurement; Tin; Cu2ZnSn(S,Se)4; Cu2ZnSnS4; admittance spectroscopy; capture cross section; defects;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925402
