Title :
Properties of very thin thermally nitrided-SiO2/Si interface based on conductance and hot-electron injection techniques
Author :
Liu, Zhihong H. ; Cheng, Yu Chung
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fDate :
9/1/1989 12:00:00 AM
Abstract :
The properties of a thermally nitrided SiO2/Si interface were investigated by conductance and hot-electron injection techniques. The results showed that a strong correlation exists between nitridation conditions and interface properties. The nitridation greatly increased the hole capture cross section as well as the nonuniformity of surface potential, whereas the hardness of the interface against hot-electron bombardment was enhanced. These phenomena may be attributed to the nitridation-induced structural change rather than the hydrogen and oxygen-hydrogen radicals. Nitridation at low temperature, over a long period of time, is preferable for improving the interfacial characteristics
Keywords :
dielectric thin films; semiconductor technology; semiconductor-insulator boundaries; silicon compounds; SixOyNz-Si; conductance measurement techniques; hardness against hot electron bombardment; hole capture cross section; hot-electron injection techniques; interface properties; interfacial characteristics; nitridation conditions; nonuniformity of surface potential; thermal nitridation; Conductive films; Fluctuations; Hydrogen; Interface states; Rough surfaces; Secondary generated hot electron injection; Silicon; Surface roughness; Temperature; Thermal conductivity;
Journal_Title :
Electron Devices, IEEE Transactions on
