DocumentCode :
122060
Title :
Formation energies of carbon related defects in Cu2ZnSnS4
Author :
Mutter, Daniel ; Dunham, Scott T.
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
2390
Lastpage :
2393
Abstract :
Cu2ZnSnS4 (CZTS) is one of the most promising absorber materials for highly efficient and low cost solar cells. A cost-effective method for the production of high quality CZTS makes use of the growth of nanocrystals in an amine solution of the involved metals, which can lead to considerable carbon incorporation in the final sample. In this study, preferred configurations and formation energies of carbon related defects in CZTS are calculated, leading to the finding, that two carbon atoms on a sulfur vacancy are a dominant defect, with minor influence on carrier lifetime, since it shows no mid-gap trapping states.
Keywords :
carrier lifetime; copper alloys; crystal defects; crystal growth; nanostructured materials; semiconductor growth; solar cells; tin alloys; vacancies (crystal); zinc alloys; Cu2ZnSnS4; absorber materials; amine solution; carbon incorporation; carbon related defects; carrier lifetime; dominant defect; formation energies; high quality CZTS; nanocrystals growth; solar cells; sulfur vacancy; two carbon atoms; Carbon; Chemicals; Lattices; Materials; Photovoltaic cells; Tin; Zinc; carbon; computational modeling; crystalline materials; photovoltaic cells; solar energy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925407
Filename :
6925407
Link To Document :
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