DocumentCode :
1220749
Title :
Silicon-on-insulator optical rib waveguides: loss, mode characteristics, bends and y-junctions
Author :
Rickman, A.G. ; Reed, G.T.
Author_Institution :
Bookham Technol. Ltd., Rutherford Appleton Lab., Chilton, UK
Volume :
141
Issue :
6
fYear :
1994
fDate :
12/1/1994 12:00:00 AM
Firstpage :
391
Lastpage :
393
Abstract :
Optical rib waveguides with widths from 2.73 to 7.73 microns have been formed in SIMOX-based silicon-on-insulator (SOI) structures consisting of a 4.32 micron thick surface-silicon layer and a 0.398 micron buried-oxide layer. The effect of waveguide width, bend radius, y-junction splitting and interface roughness on loss and mode characteristics have been studied at wavelengths of 1.15 and 1.523 microns. The experimental results support the hypothesis that certain rib dimensions can lead to single-mode waveguides even though planar SOI waveguides of similar multimicron dimension are multimode. The propagation losses of waveguides 3.72 microns wide were found to be nominally 0.0 dB/cm and 0.4 dB/cm for the TE and TM modes, respectively, when measured at 1.523 microns, where the measurement error was ±0.5 dB/cm. This means that the loss is experimentally indistinguishable from pure bulk silicon. These results are thought to be the lowest loss measurements for silicon integrated optical waveguides reported to date
Keywords :
SIMOX; bending; integrated optics; measurement errors; optical losses; optical waveguides; rib waveguides; silicon; 0.398 micron; 0.4 dB; 1.15 micron; 1.523 micron; 2.73 to 7.73 micron; 3.72 micron; 4.32 micron; SIMOX-based SOI structures; Si-SiO2; TE modes; TM modes; bend radius; bends; buried-oxide layer; integrated optical waveguides; interface roughness; loss; measurement error; mode characteristics; planar SOI waveguides; propagation losses; rib dimensions; silicon-on-insulator optical rib waveguides; single-mode waveguides; waveguide width; y-junction splitting; y-junctions;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings -
Publisher :
iet
ISSN :
1350-2433
Type :
jour
DOI :
10.1049/ip-opt:19941468
Filename :
342253
Link To Document :
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