• DocumentCode
    122101
  • Title

    Field-effect ferroelectric-semiconductor solar cells

  • Author

    Wentao Wang ; Fude Liu ; Chor Man Lau ; Lei Wang ; Guandong Yang ; Dawei Zheng ; Zhigang Li

  • Author_Institution
    Dept. of Mech. Eng., Univ. of Hong Kong, Hong Kong, China
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    2542
  • Lastpage
    2544
  • Abstract
    Traditional photovoltaic devices employ limited semiconductor materials largely due to the P-N junction structure. We have developed a new kind of field-effect ferroelectric semiconductor solar cells. Prototype cells have been demonstrated successfully. Substantial photovoltaic effect and rectifying behavior were experimentally observed. In addition, simulation study was conducted to indicate that the induced electric field due to the bound surface changes of the ferroelectric could be extended into the semiconductor. The simulation results are consistent with experimental observations. This unique device structure offers a promising alternative to achieve novel solar cells. The new cells are not P-N junction based, and in principle offer more flexibility in materials selection and optimizing charge generation, separation and collection for achieving high performance solar cells.
  • Keywords
    electric fields; semiconductor materials; solar cells; P-N junction structure; bound surface; charge collection; charge generation; charge separation; device structure; electric field; field-effect ferroelectric-semiconductor solar cells; materials selection; photovoltaic devices; prototype cells; semiconductor materials; Electric fields; Electrodes; Photovoltaic cells; Photovoltaic systems; Physics; Silicon; ferroelectric; field-effect; photovoltaics; polarization; semiconductor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925448
  • Filename
    6925448