DocumentCode
122101
Title
Field-effect ferroelectric-semiconductor solar cells
Author
Wentao Wang ; Fude Liu ; Chor Man Lau ; Lei Wang ; Guandong Yang ; Dawei Zheng ; Zhigang Li
Author_Institution
Dept. of Mech. Eng., Univ. of Hong Kong, Hong Kong, China
fYear
2014
fDate
8-13 June 2014
Firstpage
2542
Lastpage
2544
Abstract
Traditional photovoltaic devices employ limited semiconductor materials largely due to the P-N junction structure. We have developed a new kind of field-effect ferroelectric semiconductor solar cells. Prototype cells have been demonstrated successfully. Substantial photovoltaic effect and rectifying behavior were experimentally observed. In addition, simulation study was conducted to indicate that the induced electric field due to the bound surface changes of the ferroelectric could be extended into the semiconductor. The simulation results are consistent with experimental observations. This unique device structure offers a promising alternative to achieve novel solar cells. The new cells are not P-N junction based, and in principle offer more flexibility in materials selection and optimizing charge generation, separation and collection for achieving high performance solar cells.
Keywords
electric fields; semiconductor materials; solar cells; P-N junction structure; bound surface; charge collection; charge generation; charge separation; device structure; electric field; field-effect ferroelectric-semiconductor solar cells; materials selection; photovoltaic devices; prototype cells; semiconductor materials; Electric fields; Electrodes; Photovoltaic cells; Photovoltaic systems; Physics; Silicon; ferroelectric; field-effect; photovoltaics; polarization; semiconductor;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6925448
Filename
6925448
Link To Document