Characterization of leakage current in buried-oxide SOI transistors

Author

Sundaresan, Ravishankar ; Mao, Bor-yen ; Matloubian, Mishel ; Chen, C. E Daniel ; Pollack, Gordon P.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

36

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1740

Lastpage

1745

Abstract

The junction leakage current of MOSFETs built in oxygen-implanted silicon-on-insulator (SOI) substrates has been measured as a function of terminal voltages and temperature. Analysis of the results indicates that the physical mechanism causing the high junction leakage current, typically seen in SOI MOSFETs, is field-enhanced emission of carriers through traps near the buried-oxide/silicon interface. These traps are a consequence of the incorporation of metal impurities during oxygen implantation. The effects of conventional gettering techniques, oxygen dose, and control of metal contamination by modification of implanter design on leakage current are discussed

Keywords

MOS integrated circuits; electron traps; getters; hole traps; insulated gate field effect transistors; leakage currents; semiconductor-insulator boundaries; MOSFETs; O dose; O implantation; O implanted SOI substrate; SIMOX; Si-SiO₂; buried oxide/Si interface; buried-oxide SOI transistors; carriers; field-enhanced emission; gettering techniques; implanter design modification; junction leakage current; metal contamination control; metal impurities; physical mechanism; traps; Contamination; Current measurement; Gettering; Impurities; Leakage current; MOSFETs; Pollution measurement; Silicon on insulator technology; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.34237

Filename

34237