Title :
Ohmic contacts formed by ion mixing in the Si-diamond system
Author :
Fang, Fang ; Hewett, Charles A. ; Fernandes, Mark G. ; Lau, S.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA, USA
fDate :
9/1/1989 12:00:00 AM
Abstract :
Graded-bandgap contacts to natural type-IIb diamond formed by ion-beam mixing of Si (500 Å/diamond samples) are discussed. Ion mixing was carried out using 240-keV Kr+ ionsat a dose of 2×1016/cm2 at a temperature of 700°C. Si-C bonds were observed by IR absorption measurements, indicating the formation of a Si/SiC/diamond graded structure. Transmission line model measurements show that well behaved ohmic contacts can be formed on n-type channels by ion mixing with a subsequent thermal anneal. Samples without ion mixing showed higher specific contact resistivity than ion-mixed samples (~5×10-3 Ω-cm2 versus ~1×10-3 Ω-cm2). For comparison purposes. Au-Ta-based contacts were also prepared
Keywords :
contact resistance; diamond; elemental semiconductors; infrared spectra of inorganic solids; interface structure; ion beam mixing; ion implantation; ohmic contacts; silicon; silicon compounds; 700 degC; IR absorption measurements; Kr+ ions; Si-C bonds; Si-SiC-C; Si-diamond system; Si/SiC/diamond graded structure; ion-beam mixing; n-type channels; natural type-IIb diamond; semiconductors; specific contact resistivity; thermal anneal; transmission line model measurements; Annealing; Chemicals; Conductivity; Electromagnetic wave absorption; Ohmic contacts; Optical devices; Photonic band gap; Silicon carbide; Temperature; Transmission line measurements;
Journal_Title :
Electron Devices, IEEE Transactions on
