Title :
A heterojunction bipolar transistor with separate carrier injection and confinement
Author :
Luo, L.F. ; Evans, L.H. ; Yang, E.S.
Author_Institution :
Center for Telecommun. Res. & Microelectron. Sci. Lab., Columbia Univ., New York, NY, USA
fDate :
9/1/1989 12:00:00 AM
Abstract :
A heterojunction bipolar transistor (HBT) structure in which the wide-gap material serves to confine minority carriers only while the injection of carriers into the base is controlled by a homojunction is discussed. This structure offers several advantages over conventional HBTs, including improved electron injection efficiency without bandgap grading. The thickness of the narrow-gap emitter has to be optimized in order to achieve a good confinement effect. The concept can be applied to other HBTs
Keywords :
heterojunction bipolar transistors; minority carriers; HBT; carrier confinement; carrier injection; electron injection efficiency; heterojunction bipolar transistor; homojunction; minority carriers; narrow-gap emitter; wide-gap material; Bipolar transistors; Carrier confinement; Delay effects; Electron devices; Electron emission; Electron mobility; Heterojunction bipolar transistors; Photonic band gap; Silicon; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
