• DocumentCode
    1221273
  • Title

    On the accuracy of a particular implementation of the Shannon-Buehler method [MOSFET mobility models]

  • Author

    Gildenblat, Sh

  • Author_Institution
    Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
  • Volume
    36
  • Issue
    9
  • fYear
    1989
  • fDate
    9/1/1989 12:00:00 AM
  • Firstpage
    1857
  • Lastpage
    1858
  • Abstract
    The accuracy of the constant IDS-V DS version of the Shannon-Buehler method is considered. The variation of the effective mobility with gate voltage and substrate bias results in the difference between the measured and actual channel impurity profiles. General expressions that allow one to compute correction factors using different MOSFET mobility models are derived. General results are illustrated by considering two commonly used mobility models
  • Keywords
    carrier mobility; insulated gate field effect transistors; semiconductor device models; MOSFET mobility models; Shannon-Buehler method; channel impurity profiles; correction factors; effective mobility; gate voltage; substrate bias; Dielectric constant; Dielectrics and electrical insulation; Differential equations; Genetic expression; Intrusion detection; MOSFET circuits; Semiconductor impurities; Semiconductor process modeling; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.34257
  • Filename
    34257
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1221273