Title :
Comments on "Unilateral gain of heterojunction bipolar transistors at microwave frequencies
Author :
Vickes, Hans-Olof
Author_Institution :
Div. of Network Theory, Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
A general expression for Mason´s gain U is derived and expressed in the linear two-port h parameters of a network. In a recent paper by S. Prasad et al. (ibid., vol.35, no.12, 1988, p.2288-94) an incorrect expression for U is presented. The commenter shows that the two expressions are equal at only one frequency, f/sub max/, i.e. when U is solved for U=1.<>
Keywords :
equivalent circuits; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; HBT; heterojunction bipolar transistors; linear two-port parameters; microwave frequencies; Admittance; Bipolar transistors; Circuits; Electron devices; Genetic expression; Heterojunction bipolar transistors; Hydrogen; Impedance; Intelligent networks; Microwave frequencies;
Journal_Title :
Electron Devices, IEEE Transactions on
