DocumentCode :
1221414
Title :
Development and electrical properties of undoped polycrystalline silicon thin-film transistors
Author :
Proano, R.E. ; Misage, R.S. ; Ast, D.G.
Author_Institution :
Dept. of Mater. Sci. & Eng., Cornell Univ., NY, USA
Volume :
36
Issue :
9
fYear :
1989
fDate :
9/1/1989 12:00:00 AM
Firstpage :
1915
Lastpage :
1922
Abstract :
The conduction mechanism and the origins of the leakage current in undoped channel polycrystalline silicon thin-film transistors fabricated under a variety of processing conditions were investigated. Leakage currents below 1 nA at drain-source voltages of 40 V were achieved in both n-type and p-type devices. The effective channel electron and hole mobilities were 75 and 42 cm2/V-s, respectively. Measured stage delay times for CMOS ring oscillators as a function of supply voltage agreed well with theoretical calculations. The effective carrier mobility was shown to have a minimum at a gate voltage corresponding to the point at which all traps are filled. Both dark and photoinduced leakage currents were determined to be controlled by generation from the grain boundary traps. The voltage drop across individual gates in multigated structures was investigated as a function of gate voltage. The use of multiple gates at high drain-source potentials was found to decrease both dark and photoinduced leakage currents
Keywords :
CMOS integrated circuits; carrier mobility; electron traps; elemental semiconductors; grain boundaries; silicon; thin film transistors; 40 V; CMOS ring oscillators; Si; conduction mechanism; drain-source potentials; drain-source voltages; effective carrier mobility; electrical properties; electron mobilities; grain boundary traps; hole mobilities; leakage current; multigated structures; multiple gates; n-type devices; p-type devices; photoinduced leakage currents; polysilicon; stage delay times; thin-film transistors; undoped channel; voltage drop; Charge carrier processes; Delay; Electron mobility; Grain boundaries; Leakage current; Ring oscillators; Silicon; Thin film transistors; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.34270
Filename :
34270
Link To Document :
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