Title :
Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs
Author :
Serikawa, Tadashi ; Shirai, Seiiti ; Okamoto, Akio ; Suyama, Shiro
Author_Institution :
NTT Appl. Electron. Lab., Tokyo, Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
A low-temperature process developed for fabrication of high-mobility polycrystalline silicon thin-film transistors (poly-Si TFTs) is discussed. Its main feature is the use of a sputter-deposited Si film followed by laser irradiation and a sputter-deposited gate SiO 2 film. The poly-Si TFTs have a mobility of 350-cm2/V-s. They have been successfully applied to peripheral circuits for large-area liquid-crystal displays (LCDs)
Keywords :
elemental semiconductors; liquid crystal displays; silicon; silicon compounds; sputter deposition; thin film transistors; Si-SiO2; TFTs; high-mobility; large-area LCDs; laser irradiation; low-temperature process; peripheral circuits; polysilicon; Amorphous materials; Circuits; Fabrication; Liquid crystal displays; Semiconductor films; Silicon; Sputtering; Substrates; Temperature; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
