• DocumentCode
    1221469
  • Title

    Dielectrics for bright EL displays

  • Author

    Tiku, Shiban K. ; Rustomji, Sam H.

  • Author_Institution
    Sigmatron Nova Inc., Thousand Oaks, CA, USA
  • Volume
    36
  • Issue
    9
  • fYear
    1989
  • fDate
    9/1/1989 12:00:00 AM
  • Firstpage
    1947
  • Lastpage
    1952
  • Abstract
    Electroluminescent (EL) display design for high brightness is discussed. Single-layer and stacked dielectrics based on aluminum oxide, tantalum oxide, and silicon oxynitride are compared, and total stack designs are optimized for high brightness and manufacturability. Brightness values of 1 fL/Hz at Vt+30 V have been achieved
  • Keywords
    brightness; electroluminescent displays; Al2O3; SiON; Ta2O5; bright EL displays; brightness; manufacturability; single-layer dielectrics; stacked dielectrics; total stack designs; Aluminum oxide; Brightness; Dielectrics; Displays; Electrons; Interface states; Manufacturing; Optimized production technology; Phosphors; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.34276
  • Filename
    34276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1221469