DocumentCode
1221488
Title
A new formula for secondary emission yield
Author
Vaughan, J.R.M.
Author_Institution
Litton Electron Dev., Div., San Carlos, CA
Volume
36
Issue
9
fYear
1989
fDate
9/1/1989 12:00:00 AM
Firstpage
1963
Lastpage
1967
Abstract
Mathematical expressions for the secondary emission yield as a function of impact voltage and direction are required by computer programs for ray tracing, which are also intended to follow secondary trajectories. It is shown that the accuracy requirements are quite severe for lower voltage impacts, up to about three times V max (where V max is the voltage at which the normal secondary emission ratio reaches its maximum value, δmax), but are less stringent above this range. A new formula for the low-voltage region, which agrees with experimental data better than the formula of R.G. Lye and A.J. Dekker (1957), is proposed. For the voltage region above 4 V max, the Lye and Dekker formula is retained, with a smooth transition centered between 3 and 4 V max. The directional effect is modeled by adjusting the values of δmax and V max before applying either formula, rather than applying either Bruining´s or Muller´s correction factor afterward. This results in an automatic modeling of the known absence of any appreciable directional effect below about half V max. Some experimental verification of the formula used to modify δmax is presented
Keywords
electron optics; secondary electron emission; Lye Dekker formula; automatic modeling; computer programs; directional effect; impact voltage; low-voltage region; ray tracing; secondary emission yield; secondary trajectories; Current measurement; Electron devices; Electron tubes; Ray tracing; Rough surfaces; Shape; Surface discharges; Surface roughness; Surface texture; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.34278
Filename
34278
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