Title :
MOSFET linearity performance degradation subject to drain and gate voltage stress
Author :
Yu, Chuanzhao ; Yuan, J.S. ; Yang, Hong
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Central Florida, Orlando, FL, USA
Abstract :
Device parameters degradation of nonlinear elements subject to drain and gate voltage stress is examined experimentally. Analysis of metal-oxide-semiconductor field-effect transistor linearity degradation due to stress is given. Effects on radio frequency (RF) circuit linearity are investigated systematically through a SpectreRF simulation based on measured device data.
Keywords :
MOSFET; Volterra series; circuit simulation; hot carriers; mixers (circuits); semiconductor device breakdown; Gilbert cell; SpectreRF simulation; Volterra series; complementary metal-oxide-semiconductor mixers; device parameters degradation; drain voltage stress; gate oxide breakdown; gate voltage stress; hot carriers; linearity performance degradation; metal-oxide-semiconductor field-effect transistor; nonlinear elements; radio frequency circuit linearity; Capacitance; Degradation; FETs; Linearity; MOSFET circuits; Performance analysis; Radio frequency; Stress; Taylor series; Voltage;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2004.838407
