Charge trapping and breakdown mechanism in HfAlO/TaN gate stack analyzed using carrier separation

Author

Loh, Wei-Yip ; Cho, Byung Jin ; Joo, Moon Sig ; Li, Ming-Fu ; Chan, Daniel S H ; Mathew, Shajan ; Kwong, Dim-Lee

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

4

Issue

4

fYear

2004

Firstpage

696

Lastpage

703

Abstract

Charge trapping and breakdown mechanism in p- and n-channel MOSFETs with an HfAl_xO_y and TaN metal electrode are investigated. Using carrier separation measurement technique, it is possible to clearly distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated breakdown. A model of charge trapping at different spatial locations in HfAl_xO_y with a TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.

Keywords

MOSFET; electric breakdown; electron traps; hafnium alloys; leakage currents; tantalum compounds; HfAlO-TaN; MOSFET; breakdown mechanism; carrier separation measurement; charge trapping; gate leakage current; gate stack; high-K dielectrics; high-X bulk initiated breakdown; interfacial layer initiated breakdown; metal electrode; polarity dependence; Dielectric substrates; Electric breakdown; Electrodes; Hafnium oxide; MOSFETs; Microelectronics; Moon; Silicon; Stress; Tunneling;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2004.838416

Filename

1388443