Thermal resistance characterization of implanted subcollector InP-based HBTs

Author

Fields, Charles H. ; Chen, Mary Y. ; Royter, Yakov ; Sokolich, Marko

Author_Institution

HRL Labs. LLC, Malibu, CA, USA

Volume

4

Issue

4

fYear

2004

Firstpage

704

Lastpage

708

Abstract

We present the results of measurements of thermal resistivity of the heterojunction bipolar transistor (HBT) devices, utilizing selective ion implantation to define the subcollector. This new device fabrication technique resulted in high-speed HBT devices with substantially reduced thermal resistivity, compared to devices utilizing the conventional fabrication approach which includes mesa isolation for pattern definition. The measurements were taken on full-thickness 3" InP wafers at T_amb from 30°C to 180°C and two separate emitter current densities. We present data on three device epitaxial structures with identical device layouts and discuss the relationship of V_be to temperature at these elevated power and temperature levels.

Keywords

heterojunction bipolar transistors; ion implantation; thermal conductivity; thermal resistance measurement; 3 inch; 30 to 180 C; InP; InP-based HBT; elevated power level; emitter current densities; epitaxial structures; fabrication technique; heterojunction bipolar transistor devices; identical device layouts; implanted subcollector; ion implantation; mesa isolation; pattern definition; temperature level; thermal resistance characterization; thermal resistivity measurement; Conductivity; Current measurement; Density measurement; Electrical resistance measurement; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Ion implantation; Temperature; Thermal resistance;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2004.840123

Filename

1388444