Mixing finite elements and finite differences for the analysis of silicon on sapphire

Author

Hoole, S. Ratnajeevan H

Author_Institution

Dept. of Eng., Harvey Mudd Coll., Claremont, CA, USA

Volume

25

Issue

4

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

2831

Lastpage

2833

Abstract

The analysis of electron devices involves the solution of the Poisson equation, made nonlinear as a result of the charge cloud density being a function of the unknown potential. Because of the nonlinear term, the finite-element scheme becomes time consuming. However, the finite difference method, which is shown to model the term Δ² more accurately, cannot handle line charge densities and the rapid variation in the source term near such charge accumulations. It is shown that there is much to be gained by mixing the two methods in analyzing electron devices, and the method is demonstrated for a silicon-on-sapphire device

Keywords

finite element analysis; sapphire; semiconductor device models; silicon; Poisson equation; Si-Al₂O₃; charge cloud density; electron devices; finite difference method; finite elements; line charge densities; silicon on sapphire; Clouds; Difference equations; Educational institutions; Electron devices; Finite difference methods; Finite element methods; Numerical analysis; Poisson equations; Silicon; Symmetric matrices;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.34298

Filename

34298