DocumentCode :
122192
Title :
Simulation of electron escape from GaNAs/GaAs quantum well solar cells
Author :
Yongjie Zou ; Honsberg, Christiana B. ; Freundlich, Alex ; Goodnick, S.M.
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
2908
Lastpage :
2911
Abstract :
Quantum wells embedded in the active region of single-bandgap solar cells have previously been shown to increase the absorption of photons of energies lower than the host bandgap, while maintaining the open-circuit voltage. Fast carrier escape from the quantum wells is essential to achieve such performance enhancements. In the present work, we use ensemble Monte Carlo simulation to model the escape time for photo-excited carriers in dilute nitride GaNAs/GaAs quantum wells to the continuum, for different well structures. The simulated electron escape rate due to polar optical phonon absorption and emission decreases exponentially with the well depth in agreement with thermionic emission theory.
Keywords :
Monte Carlo methods; gallium arsenide; nitrogen compounds; quantum wells; solar cells; GaNAs-GaAs; Monte Carlo simulation; dilute nitride quantum wells; electron escape; electron escape simulation; open-circuit voltage; performance enhancements; photo-excited carriers; photons absorption; polar optical emission; polar optical phonon absorption; quantum well solar cells; simulation; single-bandgap solar cells; structures; thermionic emission theory; well structures; Absorption; Electric potential; Electron optics; Integrated optics; Optical scattering; Phonons; Welding; carrier escape; ensemble Monte Carlo; photovoltaic cells; quantum well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925540
Filename :
6925540
Link To Document :
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