Dual mesh approach for semiconductor device simulator

A discretization approach for 2-D simulation of semiconductor devices is proposed. The approach essentially makes use of two interlaced dual-mesh systems based on Delaunay triangles and associated Voronoi polygons, respectively. The method is applied to the solution of Poisson´s equation for a reverse-biased p-n junction. Potential, field, and carrier distributions as well as junction capacitances are obtained, showing good agreement with conventional methods and the potential for improving simulation cost performance