DocumentCode :
122211
Title :
High quality multi-crystalline silicon wafer by grain size control on directional growth method
Author :
Kai-An Ho ; Jian-Kang Chou ; Shi-Kai Tzeng ; Lung-Sheng Liao ; Chen-Hao Yang ; Jui-Pin Wu ; Yu-Hao Wu ; Yu-Chung Chen ; Chun-Wen Lai
Author_Institution :
Motech Ind., Inc., Tainan, Taiwan
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
2986
Lastpage :
2987
Abstract :
In recent year, efficiency of multi-crystalline silicon (mc) solar cell had large improvement due to better quality of wafer source. In continental thought, grain boundaries and dislocations are act as recombination center of photo-electrons. Large grain size wafers has lower density of grain boundary and should has higher percentage of converge efficiency. However, in recent year, wafers in small grain size have low dislocation density dominate the mc-solar cell industry and improve the average efficiency of solar cell more than 0.25%.
Keywords :
crystal growth; dislocation density; elemental semiconductors; grain boundaries; grain size; semiconductor growth; silicon; solar cells; Si; converge efficiency; directional growth method; dislocation density; grain boundary density; grain size wafer; multicrystalline silicon wafer; photoelectron recombination center; solar cell; Grain size; Multi-crystalline silicon; dendrite; dislocation; grain boundaries;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925559
Filename :
6925559
Link To Document :
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