High quality multi-crystalline silicon wafer by grain size control on directional growth method

Author

Kai-An Ho ; Jian-Kang Chou ; Shi-Kai Tzeng ; Lung-Sheng Liao ; Chen-Hao Yang ; Jui-Pin Wu ; Yu-Hao Wu ; Yu-Chung Chen ; Chun-Wen Lai

Author_Institution

Motech Ind., Inc., Tainan, Taiwan

fYear

2014

fDate

8-13 June 2014

Firstpage

2986

Lastpage

2987

Abstract

In recent year, efficiency of multi-crystalline silicon (mc) solar cell had large improvement due to better quality of wafer source. In continental thought, grain boundaries and dislocations are act as recombination center of photo-electrons. Large grain size wafers has lower density of grain boundary and should has higher percentage of converge efficiency. However, in recent year, wafers in small grain size have low dislocation density dominate the mc-solar cell industry and improve the average efficiency of solar cell more than 0.25%.

Keywords

crystal growth; dislocation density; elemental semiconductors; grain boundaries; grain size; semiconductor growth; silicon; solar cells; Si; converge efficiency; directional growth method; dislocation density; grain boundary density; grain size wafer; multicrystalline silicon wafer; photoelectron recombination center; solar cell; Grain size; Multi-crystalline silicon; dendrite; dislocation; grain boundaries;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925559

Filename

6925559